Samsung is looking to cut server heat with "20nm-class" DRAM chips, it said.
The firm is secretive about process details, and by 20nm-class it means 20-29nm feature size.
"We plan to ship more energy-efficient 4Gbit DDR3 DRAM based on 20nm-class process technology in the second half of this year, which will expand the market for green IT memory solutions," said v-p of marketing Wanhoon Hong.
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The announcement was made as Samsung started mass-producing 32Gbyte RDIMM and 8Gbyte SO-DIMM memory modules from 30nm-class 4Gbit DDR3 chips that it started making in February.
How energy efficient the 20nm-class DRAM will be is nto disclosed, but the firm said it saved 18% power byte-for-byte with 30nm-class memories compared with the 40nm-class 4Gb DDR3 chips it released a year before - which lead to 16Gbyte modules for servers.
Its 30nm-class 32Gbyte module operate at 1.35V and shift data at up to 1.866Gbit/s, compared with 1.333Gbit/s from 40nm-class 32Gbyte RDIMMs at 1.5V.
30nm-class 8Gbyte SO-DIMMs processes data at up to 2.133Gbit/s at 1.5V.
"Samsung expects to have more than 10% of its total DRAM chip production in 2012 at 4Gbit or higher density," said the firm.
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