CONSTRUCTION OF N-CHANNEL JFET:

It consists of


Source (S):It is the terminal through which the majority charge carriers enter the

bar. The source current is denoted by IS.

Drain: It is the terminal through which the majority charge carriers leave the bar.

The current entering the drain D is ID .VDS is the drain source voltage.

Gate: Heavily doped P-type silicon is diffused on both sides of the N-type silicon bar

by which PN junctions are formed. These layers are joined together and called

gate G.

Channel: The region BC of the N-type bar in the depletion region is called

the channel. When VDS is applied between the source and the drain, majority

Carriers move from source to drain.