It consists of
Source (S):It is the terminal through which the majority charge carriers enter the
bar. The source current is denoted by IS.
Drain: It is the terminal through which the majority charge carriers leave the bar.
The current entering the drain D is ID .VDS is the drain source voltage.
Gate: Heavily doped P-type silicon is diffused on both sides of the N-type silicon bar
by which PN junctions are formed. These layers are joined together and called
Channel: The region BC of the N-type bar in the depletion region is called
the channel. When VDS is applied between the source and the drain, majority
Carriers move from source to drain.